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  SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

  DESCRIPTION
     The 2SK2487 is N-Channel MOS Field Effect Transistor designed
  for high voltage switching applications.
  FEATURES
  · Low On-Resistance
     RDS (on) = 1.6  (VGS = 10 V, ID = 4.0 A)
  · Low Ciss Ciss = 2 100 pF TYP.
  · High Avalanche Capability Ratings
  ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
  Drain to Source Voltage                     VDSS        900     V
  Gate to Source Voltage                      VGSS        ±30     V
  Drain Current (DC)                          ID (DC)    ±8.0     A
  Drain Current (pulse)*                      ID (pulse)  ±20     A
  Total Power Dissipation (Tc = 25 °C)        PT1         140     W
  Total Power Dissipation (TA = 25 °C)        PT2         3.0     W
  Channel Temperature                         Tch         150     °C
  Storage Temperature                         Tstg    ­55 to +150 °C
  Single Avalanche Current**                  IAS         8.0     A
  Single Avalanche Energy**                   EAS         264    mJ
  *   PW  10 µs, Duty Cycle  1 %
  ** Starting Tch = 25 °C, RG = 25 , VGS = 20 V  0


             | Drain                        
             |                              
             +----+
             |    | 
        | |--+    |
        |        ---
        | |--+   / \ Body Diode
  Gate  |    |   ---
  ------| |--+    |
             |    | 
             +----+
             |
             | Source1


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  |4 ______  |
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  |          |
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  1    2    3
  
  
  1 Gate
  2 Drain
  3 Source
  4 Fin (Drain)


  5VUZ47

    VRRM 1700 V
    IF     5A

  2SC5570

  TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
                 2SC5570

  HORIZONTAL DEFLECTION OUTPUT FOR HIGH
  RESOLUTION
  DISPLAY, COLOR TV
  HIGH SPEED SWITCHING APPLICATIONS
  l High Voltage                   : VCBO = 1700 V
  l Low Saturation Voltage         : VCE (sat) = 3 V (Max.)
  l High Speed                     : tf (2) = 0.1 µs (Typ.)
  MAXIMUM RATINGS (Tc = 25°C)
            CHARACTERISTIC                  SYMBOL        RATING  UNIT
  Collector-Base Voltage                      VCBO          1700    V
  Collector-Emitter Voltage                   VCEO          800     V
  Emitter-Base Voltage                        VEBO           5      V
                               DC               IC           28
  Collector Current                                                 A
                              Pulse            ICP           56
  Base Current                                  IB           14     A
  Collector Power Dissipation                  PC           220    W
  Junction Temperature                          Tj          150    °C
  Storage Temperature Range                    Tstg       -55~150  °C

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  |_/  ()  \_|     
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  |)        (|
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  1    2    3
  
  
  1 Base
  2 Collector
  3 Emitter