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friedhof:hv

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Inhaltsverzeichnis

HV

input

dst 3345P15801

keine Daten gefunden

dst 759Z007-10

keine Daten gefunden Umfeld: NEC K2487 Datenblatt zu 2SK2487: SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION
   The 2SK2487 is N-Channel MOS Field Effect Transistor designed
for high voltage switching applications.
FEATURES
· Low On-Resistance
   RDS (on) = 1.6  (VGS = 10 V, ID = 4.0 A)
· Low Ciss Ciss = 2 100 pF TYP.
· High Avalanche Capability Ratings
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage                     VDSS        900     V
Gate to Source Voltage                      VGSS        ±30     V
Drain Current (DC)                          ID (DC)    ±8.0     A
Drain Current (pulse)*                      ID (pulse)  ±20     A
Total Power Dissipation (Tc = 25 °C)        PT1         140     W
Total Power Dissipation (TA = 25 °C)        PT2         3.0     W
Channel Temperature                         Tch         150     °C
Storage Temperature                         Tstg    ­55 to +150 °C
Single Avalanche Current**                  IAS         8.0     A
Single Avalanche Energy**                   EAS         264    mJ
*   PW  10 µs, Duty Cycle  1 %
** Starting Tch = 25 °C, RG = 25 , VGS = 20 V  0
           | Drain                        
           |                              
           +----+
           |    | 
      | |--+    |
      |        ---
      | |--+   / \ Body Diode
Gate  |    |   ---
------| |--+    |
           |    | 
           +----+
           |
           | Source1
  1. ———–

|4 __ |

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1    2    3


1 Gate
2 Drain
3 Source
4 Fin (Drain)
5VUZ47
  VRRM 1700 V
  IF     5A
2SC5570
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
               2SC5570
HORIZONTAL DEFLECTION OUTPUT FOR HIGH
RESOLUTION
DISPLAY, COLOR TV
HIGH SPEED SWITCHING APPLICATIONS
l High Voltage                   : VCBO = 1700 V
l Low Saturation Voltage         : VCE (sat) = 3 V (Max.)
l High Speed                     : tf (2) = 0.1 µs (Typ.)
MAXIMUM RATINGS (Tc = 25°C)
          CHARACTERISTIC                  SYMBOL        RATING  UNIT
Collector-Base Voltage                      VCBO          1700    V
Collector-Emitter Voltage                   VCEO          800     V
Emitter-Base Voltage                        VEBO           5      V
                             DC               IC           28
Collector Current                                                 A
                            Pulse            ICP           56
Base Current                                  IB           14     A
Collector Power Dissipation                  PC           220    W
Junction Temperature                          Tj          150    °C
Storage Temperature Range                    Tstg       -55~150  °C
  1. ———–

| \ / |

|_/  ()  \_|     
|          |
|)        (|
|          |
------------
||   ||   ||
||   ||   ||
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1    2    3


1 Base
2 Collector
3 Emitter
friedhof/hv.1345663263.txt.gz · Zuletzt geändert: 2012-08-22 21:21 von 109.192.98.64